aod3n40 400v,2.6a n-channel mosfet general description p roduct summary 500v@150 i d (at v gs =10v) 2.6a r ds(on) (at v gs =10v) < 3.1 w 100% uis tested! 100% r g tested! symbol the aod3n40 has been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. v ds units parameter absolute maximum ratings t a =25c unless otherwise noted maximum aod3n40 g s d g s d top view to252 d pak bottom view g d s symbol v ds v gs i dm (<80 m s) i dm (<20 m s) i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc pulsed drain current c 6.5 maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 46 parameter typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 150 c v 30 gate-source voltage t c =100c a i d t c =25c 2.6 1.6 5.6 pulsed drain current c continuous drain current b v units parameter maximum drain-source voltage 400 repetitive avalanche energy c derate above 25 o c 50 0.4 a 1.5 single pulsed avalanche energy h 68 mj v/ns 5 p d power dissipation b mj avalanche current c 34 maximum case-to-sink a maximum junction-to-case d,f c/w c/w 2.1 0.5 2.5 aod3n40 g s d g s d top view to252 d pak bottom view g d s rev.2.0: may 2013 page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
aod3n40 symbol min typ max units 400 500 bv dss / ? t j 0.4 v/ o c 1 1 0 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 .4 4 4.5 v r ds(on) 2.5 3.1 w g fs 1.7 s v sd 0.8 1 v i s maximum body-diode continuous current 2 .6 a i sm 5.6 a c iss 145 186 225 pf c oss 15 26 37 pf c rss 1.2 2.1 4.1 pf r g 2.2 4.4 6.6 w q g 3.3 4.2 5.1 nc q gs 1.2 1.7 2.1 nc q gd 0.5 1.0 1.5 nc t d(on) 14 n s t r 10 n s t d(off) 18 ns maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime i dss zero gate voltage drain current v ds =400v, v gs =0v g ate drain charge v ds =5v i d =250 m a v ds =320v, t j =125c i s =1a,v gs =0v v ds =40v, i d =1a f orward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz t otal gate charge v gs =10v, v ds =320v, i d =2.6a g ate source charge m a v zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v d rain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c el ectrical characteristics (t j =25c unless otherwise noted) st atic parameters parameter conditions bv dss static drain-source on-resistance v gs =10v, i d =1a r everse transfer capacitance v gs =0v, v ds =25v, f=1mhz sw itching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =200v, i d =2.6a, r g =25 w t d(off) 18 ns t f 8 n s t rr 110 140 170 n s q rr 0.5 0.64 0.8 m c this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =2.6a,di/dt=100a/ m s ,v ds =100v bo dy diode reverse recovery time i f =2.6a,di/dt=100a/ m s ,v ds =100v turn-off delaytime r g =25 w turn-off fall time a. the value of r q j a is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. h. l=60mh, i as =1.5a, v dd =150v, r g =10 ? , starting t j =25 c rev.2.0: may 2013 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
aod3n40 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v g s =5.5v 6v 10v 7v 0.1 1 1 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1 2 3 4 5 6 7 0 1 2 3 4 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v g s =10v 0 0 .5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v g s =10v i d =1a 40 1.0e-04 1 .0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d = 30a 25 125 0 1 2 3 4 5 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v g s =5.5v 6v 10v 7v 0.1 1 1 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 1 2 3 4 5 6 7 0 1 2 3 4 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v g s =10v 0 0 .5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v g s =10v i d =1a 0.8 0 .9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev.2.0: may 2013 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
aod3n40 typical electrical and thermal characteristics 0 3 6 9 1 2 15 0 2 4 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics v d s =320v i d =2.6a 1 1 0 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss 0.01 0 .1 1 10 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r d s(on) limited t j( max) =150 c t c =25 c 100 m s 0 2 00 400 600 800 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j( max) =150 c t c =25 c 0 3 6 9 1 2 15 0 2 4 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics v d s =320v i d =2.6a 1 1 0 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss 0.01 0 .1 1 10 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r d s(on) limited t j( max) =150 c t c =25 c 100 m s 0 2 00 400 600 800 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j( max) =150 c t c =25 c 0.001 0 .01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) d=t o n /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t o n t p d rev.2.0: may 2013 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
aod3n40 typical electrical and thermal characteristics 0 1 0 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0.0 0 .5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 1 00 200 300 400 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note g) t j( max) =150 c t a =25 c 0 1 0 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0.0 0 .5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 1 00 200 300 400 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) t j( max) =150 c t a =25 c 0.001 0 .01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55 c/w in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.2.0: may 2013 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
aod3n40 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar a r - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f a r dss 2 e = 1/2 li di/dt i rm r r vdd v dd q = - idt t rr ar ar rev.2.0: may 2013 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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